advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 600v fast switching characteristic r ds(on) 1 simple drive requirement i d 7a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w e as single pulse avalanche energy 2 mj t stg t j operating junction temperature range thermal data symbol value unit rthj-c maximum thermal resistance, junction-case 1.2 /w rthj-a maximum thermal resistance, junction-ambient 62 /w data & specifications subject to change without notice 7 28 104 4.4 27 -55 to 150 parameter 30 rating 600 rohs-compliant product parameter AP3987P 200804181 1 storage temperature range -55 to 150 g d s g d s to-220(p) the to-220 package is widely preferred for commercial-industrial applications. the device is suited for switch mode power supplies, dc-ac converters and high current high speed switching circuits. a p3987 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. the to-220 type provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching,ruggedized design and cost-effectiveness.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 600 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =5a - - 1 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =5a - 5 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss gate-source leakage v gs =30v - - 100 na q g total gate charge 3 i d =7a - 55 90 nc q gs gate-source charge v ds =480v - 9 - nc q gd gate-drain ("miller") charge v gs =10v - 16 - nc t d(on) turn-on delay time 3 v dd =300v - 15 - ns t r rise time i d =7a - 15 - ns t d(off) turn-off delay time r g =10 ? v gs =10v - 100 - ns t f fall time r d =43 -32- ns c iss input capacitance v gs =0v - 2750 4400 pf c oss output capacitance v ds =25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 6 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =7a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =7a, v gs =0v, - 530 - ns q rr reverse recovery charge di/dt=100a/s - 8.6 - uc notes: 1.pulse width limited by max. junction temperature. 2.starting t j =25 o c , v dd =50v , l=1.0mh , r g =25 3.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP3987P
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 AP3987P 0.8 0.9 1 1.1 1.2 1.3 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 4 8 12 16 20 0 4 8 12162024 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v g =10v 0 2 4 6 8 10 12 0 8 16 24 32 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7 .0v 6 .0v 5.0v v g =4.0 v 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j = 150 o ct j = 25 o c 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP3987P 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0 2 4 6 8 10 12 0 20406080 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =480v 0 800 1600 2400 3200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
package outline : to-220 millimeters min nom max a 4.40 4.60 4.80 b 0.76 0.88 1.00 d 8.60 8.80 9.00 c 0.36 0.43 0.50 e 9.80 10.10 10.40 l4 14.70 15.00 15.30 l5 6.20 6.40 6.60 d1 c1 1.25 1.35 1.45 b1 1.17 1.32 1.47 l 13.25 13.75 14.25 e l1 2.60 2.75 2.89 3.71 3.84 3.96 e1 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-220 2.54 ref. 7.4 ref, symbols advanced power electronics corp. 5.10 ref. e1 b b1 e d l4 l1 a c1 c l package code part number date code (ywwsss) y last digit of the year ww week sss sequence 3987p ywwsss logo l5 e d1 5
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